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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJ11015 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min.) *High DC Current Gain: hFE= 1000(Min.)@IC= -20A *Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A *Complement to Type MJ11016 APPLICATIONS *Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continunous Base Current-Continunous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE -120 -120 -5 -30 -1 200 200 -55~+200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 0.87 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJ11015 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A; IB= 0 -120 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -20A; IB= -0.2A -3.0 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= -30A; IB= -0.3A -4.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -20A; IB= -0.2A -3.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -30A; IB= -0.3A VCE=-120V; RBE=1k VCE=-120V; RBE=1k; TC=150 VCE= -50V; IB= 0 -5.0 -1.0 -5.0 -1.0 V ICER Collector Cutoff Current mA ICEO Collector Cutoff Current mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5.0 mA hFE-1 DC Current Gain IC= -20A, VCE= -5V 1000 hFE-2 DC Current Gain IC= -30A, VCE= -5V 200 isc Websitewww.iscsemi.cn |
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